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| High Speed InGaAs p-i-n Photodiode 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100m-diameter photosensitive region mounted on a metallized ceramic substrate, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance. Reliability is assured by a 100% purge burn-in (200oC, 15 hours, Vr = 20V). Chips can be attached and wire bonded to standard submounts, customer-supplied submounts or other specified packages. Features Planar Structure Dielectric Passivation 100% Purge Burn-In High Responsivity Device Characteristics Parameters Operating Voltage Dark Current Capacitance Responsivity Rise/Fall Frequency Response Reverse Voltage Forward Current Reverse Current Operating Temperature Storage Temperature Soldering Temperature Test Conditions -5V -5V 1300nm 1500nm (-3dB) Min 0.80 - Typ 0.5 0.9 0.9 1.0 1.0 Max -20 2 0.5 - Units Volts nA pF A/W A/W ns GHz Absolute Maximum Ratings 30 Volts 5 mA 500 A o -40 C to + 85oC -40oC to + 85oC 250oC 829 Flynn Road, Camarillo, CA 93012 tel (805) 445-4500 fax (805) 445-4502. |
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